Paper
4 August 1993 Positive DUV resist (APEX-E) by IBM for SVGL Micrascan
Vasanti A. Deshpande, Nathan S. Thane, John S. Hargreaves, Yumiko Takamori, Eric M. Apelgren, Peter Freeman, Karey L. Holland
Author Affiliations +
Abstract
The imaging performance of IBM's positive DUV resist is evaluated on SVGL Micrascan. Preliminary results on GCA excimer laser are included. Contamination effects are studied using 0.5 micron lines and spaces on Micrascan I using cross-sections at various delay times. The effects of delay times between different processing steps such as coat to expose and expose to PEB are studied. The performance is further evaluated by processing wafer lots on line for Micrascan I and II. Data on resolution, depth of focus and process latitude are presented for 0.35 and 0.5 micron geometries. The effects of PEB temperature variation are studied. Performance on different substrates (poly, metals and contacts) is evaluated.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vasanti A. Deshpande, Nathan S. Thane, John S. Hargreaves, Yumiko Takamori, Eric M. Apelgren, Peter Freeman, and Karey L. Holland "Positive DUV resist (APEX-E) by IBM for SVGL Micrascan", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.148938
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers

Thin film coatings

Deep ultraviolet

Scanning electron microscopy

Metals

Etching

Image processing

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