Dielectronic recombination of Li-like Si ion

Huaguo Teng; Zhizhan Xu; Baifei Sheng; Wengqi Zhang

doi:10.1117/12.155774

10 September 1993 Dielectronic recombination of Li-like Si ion

Huaguo Teng, Zhizhan Xu, Baifei Sheng, Wengqi Zhang

Proceedings Volume 1928, International Symposium on Laser-Plasma Interactions; (1993) https://doi.org/10.1117/12.155774
Event: Laser-Plasma Interactions: the International Symposium, 1992, Shanghai, China

Abstract

The detailed level to level partial dielectronic recombination rate coefficients of Li-like Si ion through 2 pnl manfolds are calculated. These rate coefficients are presented by the average wavelength (lambda) and average absorption oscillator strengths f defined by P. L. Hagelstein. All calculations are made on the basis of Cowan's program (HFR).

Citation Download Citation

Huaguo Teng, Zhizhan Xu, Baifei Sheng, and Wengqi Zhang "Dielectronic recombination of Li-like Si ion", Proc. SPIE 1928, International Symposium on Laser-Plasma Interactions, (10 September 1993); https://doi.org/10.1117/12.155774

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