Josef Krasa,1 M. Pietrikova,1 Libor Juha,1 Milos Chvojka,1 Bozena Kralikova,1 Karel Masek,1 Jiri Skala,1 E. Krousky,1 J. Trousil,2 J. Plichta,2 Anita Darickova3
1Institute of Physics (Czech Republic) 2National Personal Dosimetry Service (Czech Republic) 3Technical Univ. (Czech Republic)
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Comparative measurements of Si P-I-N diodes and thermoluminescent dosemeters responses to laser produced plasma soft x-ray radiation are reported. As dosemeters single crystals LiF:Mn,Ti TLD 100 and CaF2:Dy TLD 200 were used. It is demonstrated that an enhanced response of the Si P-I-N diodes is a significant effect in a region of high dose rates.
Josef Krasa,M. Pietrikova,Libor Juha,Milos Chvojka,Bozena Kralikova,Karel Masek,Jiri Skala,E. Krousky,J. Trousil,J. Plichta, andAnita Darickova
"Comparison of Si P-I-N diodes and thermoluminescent detector responses in the soft x-ray region", Proc. SPIE 1980, Iodine Lasers and Applications, (23 April 1993); https://doi.org/10.1117/12.144508
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Josef Krasa, M. Pietrikova, Libor Juha, Milos Chvojka, Bozena Kralikova, Karel Masek, Jiri Skala, E. Krousky, J. Trousil, J. Plichta, Anita Darickova, "Comparison of Si P-I-N diodes and thermoluminescent detector responses in the soft x-ray region," Proc. SPIE 1980, Iodine Lasers and Applications, (23 April 1993); https://doi.org/10.1117/12.144508