Paper
15 October 1993 Inversion-channel resonant-cavity-enhanced field-effect photodetector for 2D OEIC applications
Sonu L. Daryanani, Geoffrey W. Taylor, Timothy A. Vang, Stephen K. Sargood, Benjamin Tell, D. Wendling, Lloyd R. Harriott
Author Affiliations +
Abstract
The operation of the inversion-channel Resonant-Cavity Enhanced (RCE) photodetector is demonstrated in a configuration compatible with the Vertical Cavity Surface Emitting Laser (VCSEL). The phototransistor used 3 strained InGaAs/GaAs quantum well's as the absorbing region and a post-growth dielectric top stack. A quantum efficiency of 41% was obtained at a resonant wavelength of 0.94 micrometers , thereby giving a resonant enhancement factor of 13.5. A bipolar transistor gain of 6.8 at a current density of 10 A/cm2 allowed the phototransistor responsivity to reach 2.1 A/W at the resonant wavelength. We also demonstrate the movement of the resonant peak through the use of Focussed Ion-Beam (FIB) etching which has potential applications in Wavelength Division Multiplexed (WDM) systems.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sonu L. Daryanani, Geoffrey W. Taylor, Timothy A. Vang, Stephen K. Sargood, Benjamin Tell, D. Wendling, and Lloyd R. Harriott "Inversion-channel resonant-cavity-enhanced field-effect photodetector for 2D OEIC applications", Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); https://doi.org/10.1117/12.158581
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Cited by 1 scholarly publication.
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KEYWORDS
Photodetectors

Etching

Quantum wells

Power meters

Dielectrics

Gallium arsenide

Reflectivity

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