Optical diagnostics of quaternary narrow-gap semiconductors

Georgiy G. Tarasov; Yuri I. Mazur; Jens Wolfgang Tomm; S. I. Kriven; S. R. Lavorik; N. V. Shevchenko

doi:10.1117/12.191988

31 October 1994 Optical diagnostics of quaternary narrow-gap semiconductors

Georgiy G. Tarasov, Yuri I. Mazur, Jens Wolfgang Tomm, S. I. Kriven, S. R. Lavorik, N. V. Shevchenko

Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191988
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine

Abstract

Optical diagnostics of HgCdMnTe, HgCdMnSe narrow-gap semiconductors have been performed by means of FIR vibrational spectroscopy and IR luminescence for the case of low manganese content. Primary attention is given to the spectral features attributed to structural disordering or defects presence both in perfect and in real crystalline structures of HgCdTe(Se).

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Georgiy G. Tarasov, Yuri I. Mazur, Jens Wolfgang Tomm, S. I. Kriven, S. R. Lavorik, and N. V. Shevchenko "Optical diagnostics of quaternary narrow-gap semiconductors", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191988

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