Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces

Jose Sanchez-Dehesa; Francisco Meseguer; R. Mayoral; Juan A. Porto; Ceferino Lopez; Jose A. Martinez-Lozano; A. Vinattieri; Marcello Colocci; A. Marti-Ceschin; Nicolas Grandjean; J. Massies

doi:10.1117/12.175718

11 May 1994 Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces

Jose Sanchez-Dehesa, Francisco Meseguer, R. Mayoral, Juan A. Porto, Ceferino Lopez, Jose A. Martinez-Lozano, A. Vinattieri, Marcello Colocci, A. Marti-Ceschin, Nicolas Grandjean, J. Massies

Author Affiliations +

Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175718
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells wit large In content (x equals 0.35). We associate this behavior to the localization of carriers in regions of quasi one-dimensional confinement which are induced by fluctuations in the lateral periodicity of the strained layers. This assumption is supported by time resolved measurements and explained through theoretical calculations.

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Jose Sanchez-Dehesa, Francisco Meseguer, R. Mayoral, Juan A. Porto, Ceferino Lopez, Jose A. Martinez-Lozano, A. Vinattieri, Marcello Colocci, A. Marti-Ceschin, Nicolas Grandjean, and J. Massies "Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175718

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