Femtosecond carrier dynamics in low-temperature-grown III-V semiconductors

Y. Kostoulas; Ting Gong; Bradford C. Tousley; Gary W. Wicks; Paul W. Cooke; Philippe M. Fauchet

doi:10.1117/12.175881

6 May 1994 Femtosecond carrier dynamics in low-temperature-grown III-V semiconductors

Y. Kostoulas, Ting Gong, Bradford C. Tousley, Gary W. Wicks, Paul W. Cooke, Philippe M. Fauchet

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175881
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We report systematic studies of the femtosecond transient reflectivity and transmission in low- temperature-grown III-V semiconductors. By using a 2-eV-pump/white-light-probe system as well as a tunable infrared laser we are able to investigate different materials and shed new light on the processes governing the photoexcited carrier dynamics in these compounds.

Citation Download Citation

Y. Kostoulas, Ting Gong, Bradford C. Tousley, Gary W. Wicks, Paul W. Cooke, and Philippe M. Fauchet "Femtosecond carrier dynamics in low-temperature-grown III-V semiconductors", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175881

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