Internal thermalization of the electron-hole plasma in the subpicosecond regime in GaAs

S. Hunsche; H. Heesel; A. Ewertz; Heinrich Kurz; Jacques H. Collet

doi:10.1117/12.175882

6 May 1994 Internal thermalization of the electron-hole plasma in the subpicosecond regime in GaAs

S. Hunsche, H. Heesel, A. Ewertz, Heinrich Kurz, Jacques H. Collet

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175882
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We report new experimental results on the internal thermalization of the electron-hole plasma (EHP) in bulk GaAs. Time-resolved differential transmission spectra have been systematically studied for different pump photon energies (1.45 eV < $HBAR(omega) < 1.51 eV) and different excitation intensities. The experimental data demonstrate that the plasma thermalization is achieved within a stable interval of 150 - 200 fs for plasma densities ranging from 2 X 10¹⁷ to 2 X 10¹⁸/cm³. Experimental results are in good agreement with the thermalization times deduced from plasma dynamics calculations using dynamic screening of the interactions in the framework of Boltzmann's equations.

Citation Download Citation

S. Hunsche, H. Heesel, A. Ewertz, Heinrich Kurz, and Jacques H. Collet "Internal thermalization of the electron-hole plasma in the subpicosecond regime in GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175882

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