Photoconductive and photovoltaic ultraviolet sensors based on GaN

Mohamed Asif Khan; D. T. Olson; Amal R. Bhattarai; Jonathon Norbert Kuznia; S. Krishnankutty

doi:10.1117/12.175263

2 May 1994 Photoconductive and photovoltaic ultraviolet sensors based on GaN

Mohamed Asif Khan, D. T. Olson, Amal R. Bhattarai, Jonathon Norbert Kuznia, S. Krishnankutty

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175263
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We have fabricated photoconductive and photovoltaic ultraviolet sensors from GaN single layers and pn-junctions. These sensors exhibit a sharp long wavelength cut-off in responsivity at the bandgap (365 nm). The active layers (GaN) were deposited using low pressure MOCVD. The p-type doping was accomplished using Mg as the dopant. Photoconductive, and schottky barrier detectors were then fabricated using photolithography, reactive ion etching and contact metallizations. These processing techniques were developed specific to the A1_xGa_1-xN material system. We will discuss growth, fabrication and characterization details for these various device types. The measured values of device parameters will be contrasted with those estimated from active layer material characterization.

Citation Download Citation

Mohamed Asif Khan, D. T. Olson, Amal R. Bhattarai, Jonathon Norbert Kuznia, and S. Krishnankutty "Photoconductive and photovoltaic ultraviolet sensors based on GaN", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175263

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