Paper
2 May 1994 Inversion channel detection circuits for optoelectronic interconnect
Geoffrey W. Taylor, Patrik A. Evaldsson, Timothy A. Vang, Philip A. Kiely
Author Affiliations +
Proceedings Volume 2153, Optoelectronic Interconnects II; (1994) https://doi.org/10.1117/12.174504
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The inversion channel technology is a new approach to monolithic optoelectronic integration that offers the possibility of FET logic, optical detection, and laser emission from a single chip. The detection is performed by the three terminal configuration of the DOES biased in the off state. Incident light switches the DOES into the on state and recovery from the on state is provided by the conduction of electrons from the inversion channel through a FET connected to the third terminal. In this paper we demonstrate the functionality of this operation with an OEIC that integrates the three terminal DOES device with four FETs. The operation is discussed both as an optical clock and as an electrically clocked optical gate. Sensitivity issues are considered.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geoffrey W. Taylor, Patrik A. Evaldsson, Timothy A. Vang, and Philip A. Kiely "Inversion channel detection circuits for optoelectronic interconnect", Proc. SPIE 2153, Optoelectronic Interconnects II, (2 May 1994); https://doi.org/10.1117/12.174504
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Cited by 1 scholarly publication.
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KEYWORDS
Field effect transistors

Switches

Switching

Optoelectronics

Sensors

Receivers

Logic

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