Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures

Regine G. Tarascon-Auriol; Anthony E. Novembre; Woon Wai Tai; Linus A. Fetter; Janet M. Kometani; Omkaram Nalamasu

doi:10.1117/12.175343

16 May 1994 Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures

Regine G. Tarascon-Auriol, Anthony E. Novembre, Woon Wai Tai, Linus A. Fetter, Janet M. Kometani, Omkaram Nalamasu

Author Affiliations +

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175343
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The electron-beam lithographic response of CAMP6 is evaluated and compared to the characteristics of the chemically amplified resist under deep UV exposure. The optimization of the electron- beam lithographic properties of the positive deep UV resist CAMP6 has been performed by evaluating the effects of prebake temperature (ranging from 115 to 140 degree(s)C) and post-exposure bake temperature (ranging from 115 to 150 degree(s)C) on the observed resist thickness loss and percent of t-BOC group deprotection as measured by IR spectroscopy.

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Regine G. Tarascon-Auriol, Anthony E. Novembre, Woon Wai Tai, Linus A. Fetter, Janet M. Kometani, and Omkaram Nalamasu "Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175343

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