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1 May 1994 Die-to-database inspection and defect specification
Yair Eran, Ido Weinberg, Patricia D. Beard
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Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174124
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States
Abstract
Mask defect specification is derived from the needs of IC makers. It is primarily based on the wafer design rule. The specification relates to many issues that are usually defined and tested separately. In this paper we are concerned with the relation between edge defect specification and CD tolerance. The main problem with a combination of errors is how to handle the case of two errors of different kinds that are both below the specification, when considered separately, but their total change in edge position is larger than the edge defect specification. By convention, CD errors are automatically eliminated during automatic defect inspection by bias correction. Therefore, the inspection machine actually processes a database representation that matches the scanned image of the inspected die as best as possible. Thus the detection of combinations of global CD errors and edge extensions is prevented. An analysis of the problem is presented. A novel approach is suggested by which the user may optionally take into account CD errors together with edge defects during inspection. The experimental results are reported and initial conclusions are drawn.
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Yair Eran, Ido Weinberg, and Patricia D. Beard "Die-to-database inspection and defect specification", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174124
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KEYWORDS
Inspection
Defect inspection
Image processing
Databases
Photomasks
Semiconducting wafers
Tolerancing
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