V-band monolithic integrated circuits for personal communication terminals

Masaki Funabashi; K. Ohata; K. Onda; Takashi Inoue; K. Hosoya; M. Kuzuhara

doi:10.1117/12.182986

19 August 1994 V-band monolithic integrated circuits for personal communication terminals

Masaki Funabashi, K. Ohata, K. Onda, Takashi Inoue, K. Hosoya, M. Kuzuhara

Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.182986
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

A single-stage high gain wide band amplifier and an MMIC oscillator at V-band have been successfully fabricated based on a 0.15 micrometers T-shaped gate AlGaAs/InGaAs/AlGaAs heterojunction FET (HJFET) technology. The MMIC amplifier exhibits 7.2 dB +/- 1.0 dB gain over 49 approximately equals 61 GHz band and 15.3 dBm output power at 57.9 GHz. The MMIC oscillator shows 51 GHz oscillation with 2.8 dBm output power. These MMICs are promising for realizing compact personal communication terminals.

Citation Download Citation

Masaki Funabashi, K. Ohata, K. Onda, Takashi Inoue, K. Hosoya, and M. Kuzuhara "V-band monolithic integrated circuits for personal communication terminals", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.182986

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