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23 June 1994 Hole trapping in MOSFET by hot carrier stressing and ionizing irradiation at 77K
Naresh C. Das
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Proceedings Volume 2226, Infrared Readout Electronics II; (1994) https://doi.org/10.1117/12.178472
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States
Abstract
Hole trapping phenomena by substrate hot carrier (SHC) stressing and ionizing radiation are compared. Similar effects on device characteristics such as transconductance change, threshold voltage (Vt) shift etc due to SHC stressing and ionizing radiation are observed. Less radiation induced Vt shift is observed for SHC stressed device than that due to virgin device. Though the hole traps due to SHC stressing and ionizing irradiation anneal with applied field, their annealing behavior is markedly different. It is due to the fact that the hole trap distribution is different for SHC stressing condition than that due to ionizing irradiation.
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Naresh C. Das "Hole trapping in MOSFET by hot carrier stressing and ionizing irradiation at 77K", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); https://doi.org/10.1117/12.178472
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KEYWORDS
Field effect transistors
Ionizing radiation
Annealing
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