In situ growth studies of nanometer thin-film multilayers using grazing x-ray reflectivity and ellipsometry

Eike Lueken; Eric Ziegler; P. Hoeghoej; Andreas K. Freund; Erich Gerdau; Alain Fontaine

doi:10.1117/12.192085

4 November 1994 Growth monitoring of W/Si multilayers by x-ray reflectivity and kinetic ellipsometry

Eike Lueken, Eric Ziegler, P. Hoeghoej, Andreas K. Freund, Erich Gerdau, Alain Fontaine

Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192085
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France

Abstract

This paper presents a new type of X-ray reflectometer that measures the grazing incidence reflectivity at an energy of 8 keV for angles from 0 - 2.5 degree(s) simultaneously. With an acquisition time of 5 s this allows to analyze the layer growth during a deposition process with a thickness accuracy in the sub-nm range. As a second independent method we are using kinetic and spectroscopic ellipsometry to follow the same deposition process.

Citation Download Citation

Eike Lueken, Eric Ziegler, P. Hoeghoej, Andreas K. Freund, Erich Gerdau, and Alain Fontaine "Growth monitoring of W/Si multilayers by x-ray reflectivity and kinetic ellipsometry", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); https://doi.org/10.1117/12.192085

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