Application of room-temperature CMOS process for low-temperature infrared readout circuit design

Wei-Lee Lu; Chin-Hsin Kao; L. S. Lu; Far-Wen Jih; Tai Ping Sun; Sheng-Jehn Yang; Charles Ching-Hsia Hsu; Chung-Yu Wu

doi:10.1117/12.188668

17 October 1994 Application of room-temperature CMOS process for low-temperature infrared readout circuit design

Wei-Lee Lu, Chin-Hsin Kao, L. S. Lu, Far-Wen Jih, Tai Ping Sun, Sheng-Jehn Yang, Charles Ching-Hsia Hsu, Chung-Yu Wu

Proceedings Volume 2269, Infrared Technology XX; (1994) https://doi.org/10.1117/12.188668
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Silicon VLSI technology can be used to build a high density readout circuit for the emerging high resolution IRFPA imaging system. The readout circuit has to be operating at liquid nitrogen (LN) temperature in order to both improve system performance and design simplicity as well as reduce complexity. Devices with various sizes are measured down to LN temperature. As silicon MOSFETs cooled down, various anomalies are observed. The observed anomalies in the measured results are described and explained whenever possible. The two most important temperature dependent parameters -- threshold voltage and carrier mobility are studied. Simple guidelines are provided to obtain suitable SPICE MOS level 3 dc parameters for circuit simulation.

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Wei-Lee Lu, Chin-Hsin Kao, L. S. Lu, Far-Wen Jih, Tai Ping Sun, Sheng-Jehn Yang, Charles Ching-Hsia Hsu, and Chung-Yu Wu "Application of room-temperature CMOS process for low-temperature infrared readout circuit design", Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); https://doi.org/10.1117/12.188668

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