Stable second-order nonlinearity in SiO2-based waveguides on Si using temperature/electric-field poling

Richard A. Myers; Steven R. J. Brueck; Richard P. Tumminelli

doi:10.1117/12.188708

3 October 1994 Stable second-order nonlinearity in SiO₂-based waveguides on Si using temperature/electric-field poling

Richard A. Myers, Steven R. J. Brueck, Richard P. Tumminelli

Author Affiliations +

Proceedings Volume 2289, Doped Fiber Devices and Systems; (1994) https://doi.org/10.1117/12.188708
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

A stable second-order nonlinearity established by temperature/electric-field poling of a SiO₂-based waveguide stack on a Si substrate with a nonlinearity comparable to that observed in bulk fused silica samples (approximately 1 pm/V) is described. Samples with various layer thickness and composition are compared to determine important parameters in generating the second-order nonlinearity. Temperature and voltage studies are also presented to help understand the dynamics of the nonlinearity.

Citation Download Citation

Richard A. Myers, Steven R. J. Brueck, and Richard P. Tumminelli "Stable second-order nonlinearity in SiO₂-based waveguides on Si using temperature/electric-field poling", Proc. SPIE 2289, Doped Fiber Devices and Systems, (3 October 1994); https://doi.org/10.1117/12.188708

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