Paper
16 September 1994 Pulse-modulated infrared-laser interferometric thermometry for Si substrate temperature measurement
Jun Kikuchi, Ryo Kurosaki, Shuzo Fujimura, Hiroshi Yano
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Abstract
We present a simple optical interferometric technique for measuring temperatures of semiconductor substrates. This technique determines the direction of temperature change from two interferograms, one is an original interferogram and the other is a slightly phase-shifted interferogram due to a small decrease in a wavelength of a pulse- modulated infrared semiconductor laser immediately after the laser was turned on. We measured temperature of a Si wafer during an arbitrary change of heating and cooling.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Kikuchi, Ryo Kurosaki, Shuzo Fujimura, and Hiroshi Yano "Pulse-modulated infrared-laser interferometric thermometry for Si substrate temperature measurement", Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); https://doi.org/10.1117/12.186778
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Temperature metrology

Semiconducting wafers

Silicon

Interferometry

Infrared radiation

Semiconductor lasers

Thermometry

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