Structure and characteristic of porous silicon layer

Guang-Pu Wei; Jingwei Feng; Yiming Zheng; Yu Li

doi:10.1117/12.190741

26 October 1994 Structure and characteristic of porous silicon layer

Guang-Pu Wei, Jingwei Feng, Yiming Zheng, Yu Li

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190741
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Porous silicon was prepared by the anodization of p/p⁺ epitaxial c-Si wafer. Its structure was examined by electron microscopy, Raman spectrum and infrared spectrum. The results of examination show the porous Si consists of many nano-scale pores and crystalline slices, and at the surface of slices, there is a amorphous-like thin film containing Si-H, Si-O and Si-H₂ bonds. When the porous Si layer was excited with violetilight, bright visible photoluminescence can be observed. The origin of visible luminescence may be due to both the quantum confinement of carriers into the nano- scale slices (or pillars) and the fluorescence emission of the amorphous-like film containing Si-H, Si-O and Si-H₂ bonds.

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Guang-Pu Wei, Jingwei Feng, Yiming Zheng, and Yu Li "Structure and characteristic of porous silicon layer", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190741

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