New methods for determining trap parameters in semiconductors from TSC and TL spectra

Arkadiusz Mandowski; Jozef Swiatek

doi:10.1117/12.224957

16 October 1995 New methods for determining trap parameters in semiconductors from TSC and TL spectra

Arkadiusz Mandowski, Jozef Swiatek

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224957
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

Kinetics of thermally stimulated conductivity (TSC) and thermoluminescence (TL) are considered using the classical trap model. Taking advantage of some recently derived analytical formulae we present new methods for determining trap parameters, especially the density of deep traps and activation energy, from thermally stimulated spectra. Approximate analytical solutions for TSC and TL in the form of a generalized 'initial rise' method are derived. It is shown that performing thermally stimulated experiments for different heating rates it is possible to determine some basic trap parameters by solving a simple non-linear equation. Relative error of the approximations is estimated numerically for various trap parameters. In most cases the error is less than 0.1% in the whole range of the spectrum.

Citation Download Citation

Arkadiusz Mandowski and Jozef Swiatek "New methods for determining trap parameters in semiconductors from TSC and TL spectra", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224957

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