Test structures for modeling and fabrication of Fabry-Perot-type GaAs/AlGaAs waveguide modulators

Sergiusz Z. Patela; Robert A. Lowkis; Regina Paszkiewicz; Bogdan Paszkiewicz; Marek J. Tlaczala; Jacek M. Radojewski; Anna Sankowska

doi:10.1117/12.206912

24 April 1995 Test structures for modeling and fabrication of Fabry-Perot-type GaAs/AlGaAs waveguide modulators

Sergiusz Z. Patela, Robert A. Lowkis, Regina Paszkiewicz, Bogdan Paszkiewicz, Marek J. Tlaczala, Jacek M. Radojewski, Anna Sankowska

Author Affiliations +

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206912
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Modulator structures fabricated in GaAs/AlGaAs multilayer system offer the advantages of optoelectronic circuits integration and backup of well developed epitaxial layers technology. Fabry-Perot (F-P) waveguide-type modulators have been analyzed and fabricated in MOCVD produced GaAs/AlGaAs structures. Test structures have been developed to obtain the values of material and technological parameters necessary for exact modelling and successful technology development. Theoretical model of F-P modulator has been developed. The output intensity dependencies of F-P modulator on different input parameters are plotted and then obtained characteristics are considered in terms of fabrication technology and modulator applications. With measured electrical parameters, equivalent circuits of electrode structure has been built. The model has been used to analyze the frequency response of the device in the range from DC to RF. Finally, system approach is developed towards the processes of research and fabrication of Fabry-Perot type electro-optic modulator.

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Sergiusz Z. Patela, Robert A. Lowkis, Regina Paszkiewicz, Bogdan Paszkiewicz, Marek J. Tlaczala, Jacek M. Radojewski, and Anna Sankowska "Test structures for modeling and fabrication of Fabry-Perot-type GaAs/AlGaAs waveguide modulators", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206912

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KEYWORDS

Modulators

Waveguides

Resonators

Electrodes

Gallium arsenide

Electrooptic modulators

Fabry–Perot interferometers

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