Low-temperature photoluminescence in In-doped CdMnTe/CdTe quantum wells and superlattices

Jerzy M. Wrobel; Jan J. Dubowski; Piotr Becla

doi:10.1117/12.206257

10 April 1995 Low-temperature photoluminescence in In-doped CdMnTe/CdTe quantum wells and superlattices

Jerzy M. Wrobel, Jan J. Dubowski, Piotr Becla

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206257
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Multiple quantum wells and superlattices of CdMnTe/CdTe were grown epitaxially on ZnCdTe using Pulsed Laser Evaporation and Epitaxy for Cd_.85Mn_.15Te doped with indium and high purity CdTe targets. Photoluminescence was measured in the 4-80 K temperature range. The use of different excitation wavelengths (488 nm and 623 nm) led to depth studies of the structures. In order to determine the degree of indium incorporation in the wells, the results from the multiple layer structures were compared with the photoluminescence from single layers deposited under similar conditions.

Citation Download Citation

Jerzy M. Wrobel, Jan J. Dubowski, and Piotr Becla "Low-temperature photoluminescence in In-doped CdMnTe/CdTe quantum wells and superlattices", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206257

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