Lithography strategy for printing 0.35 um devices

Satyendra S. Sethi; Mark William Barrick; Jason Massey; C. Froelich; Michele R. Weilemann; F. Garza

doi:10.1117/12.209277

26 May 1995 Lithography strategy for printing 0.35 um devices

Satyendra S. Sethi, Mark William Barrick, Jason Massey, C. Froelich, Michele R. Weilemann, F. Garza

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209277
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

This paper discusses two lithography strategies for printing 0.35 micrometers features: broad band deep ultraviolet (DUV) lithography using a chemically amplified resist dyed to an optical density of 0.40 per micrometers and the use of high numerical aperture (NA) i-line lithography with an advanced i-line resist. Lithographic results such as linearity, exposure and focus latitudes, reflective notching control, and post exposure bake (PEB) delay time are compared. Results on product wafers are also illustrated. Finally, experimental data is compared with PROLITH/2 simulations.

Citation Download Citation

Satyendra S. Sethi, Mark William Barrick, Jason Massey, C. Froelich, Michele R. Weilemann, and F. Garza "Lithography strategy for printing 0.35 um devices", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209277

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