Emission of strained-layer InGaAs quantum well under high-injection level: study of bandfilling and broadening effects

Irina V. Akimova; Petr Georgievich Eliseev

doi:10.1117/12.238999

1 May 1996 Emission of strained-layer InGaAs quantum well under high-injection level: study of bandfilling and broadening effects

Irina V. Akimova, Petr Georgievich Eliseev

Author Affiliations +

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238999
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Spectral study is presented of strained InGaAs/GaAs/AlGaAs quantum-well laser structure (emission peak near 980 nm) in wide temperature and injection current density ranges. Special measures are undertaken to reduce the distortion of the spectral distribution of spontaneous emission by stimulated optical processes. Dynamic degeneration level over 10 kT at low temperature is achieved. The band filling process and spectral broadening are investigated, and characteristics of both processes are determined.

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Irina V. Akimova and Petr Georgievich Eliseev "Emission of strained-layer InGaAs quantum well under high-injection level: study of bandfilling and broadening effects", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238999

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