Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon

Mikhail S. Bresler; Oleg B. Gusev; V. K. Kudoyarova; A. N. Kuznetsov; Petr E. Pak; E. I. Terukov; Irina N. Yassievich; B. P. Zakharchenya

doi:10.1117/12.229154

3 January 1996 Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon

Mikhail S. Bresler, Oleg B. Gusev, V. K. Kudoyarova, A. N. Kuznetsov, Petr E. Pak, E. I. Terukov, Irina N. Yassievich, B. P. Zakharchenya

Author Affiliations +

Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229154
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation

Abstract

Photoluminescence of erbium-doped hydrogenated amorphous silicon was observed and compared with that of crystalline erbium-doped silicon. It is shown that a-Si:H:Er exhibits efficient room-temperature photoluminescence at 1.537 micrometer which is as strong as the emission from optimized c-Si:Er at 2 K. Practically no temperature quenching of the emission intensity in the range 2 - 300 K is observed. Saturation of erbium luminescence on increase of excitation level occurs at higher intensities of pumping beam than in c-Si:Er indicating shorter radiation lifetime of erbium ions.

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Mikhail S. Bresler, Oleg B. Gusev, V. K. Kudoyarova, A. N. Kuznetsov, Petr E. Pak, E. I. Terukov, Irina N. Yassievich, and B. P. Zakharchenya "Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229154

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