Comprehensive Test Sequence For The Electron Beam Exposure System

Terrence E. Zavecz

doi:10.1117/12.931874

28 July 1981 Comprehensive Test Sequence For The Electron Beam Exposure System

Terrence E. Zavecz

Author Affiliations +

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931874
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The electron beam exposure systems (EBES) currently used for photomask fabrication have been designed to operate to positional accuracies of ∓ 0.031 micron over an address range of 0.20 to 1.00 micron. The tuning, calibration and characterization of these systems has required an exacting and time consuming series of tests. A standard test array, MARKET A15, has been developed which enables full system characterization with only a thirty minute master generation time'and four hours analysis. System parameters such as linewidth control, resolution, registration, absolute accuracy and pattern scale accuracy can be determined from a single plate. The tests are composed of a series of exposures designed for analysis under an optical microscope along with a second group requiring reinsertion of the plate into EBES for "self-analysis". This array can be used as a basis for tuning, monitoring and multiple systems calibration of EBES or EBES-like rastor scan systems, A discussion of tests and techniques demonstrates how several EBES type systems in Western Electric and Bell Laboratories have been brought into mutual compatibility.

Citation Download Citation

Terrence E. Zavecz "Comprehensive Test Sequence For The Electron Beam Exposure System", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931874

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