Multilayer deposition and nanostructuring by laser methods

Andre A. Gorbunov; Wolfgang Pompe; Andreas Sewing; A. D. Akhsakhaljan; Sergey V. Gaponov; Nikolai N. Salashchenko; Reiner Dietsch; Hermann Mai; S. Voellmar

doi:10.1117/12.232206

11 March 1996 Multilayer deposition and nanostructuring by laser methods

Andre A. Gorbunov, Wolfgang Pompe, Andreas Sewing, A. D. Akhsakhaljan, Sergey V. Gaponov, Nikolai N. Salashchenko, Reiner Dietsch, Hermann Mai, S. Voellmar

Author Affiliations +

Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232206
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic

Abstract

A high vacuum pulsed laser deposition system is described where an intersection of two ablation plumes from twinned simultaneously irradiated targets is used. This system allows thin film and multilayer deposition of a wide variety of materials (including low melting point metals like tin) practically without droplet contamination. The intersection region acts as a filter for droplets and high energy plasma particles. The use of twinned targets of different materials facilitates preparation of artificially mixed supersaturated thin film solid state solutions used as a media for sub-micrometer and nanometer-scale surface processing. Special design of the target holder that can carry simultaneously up to 24 targets and computer control of the deposition process make it possible to easily change targets without venting the deposition chamber and to deposit arbitrary multilayer combinations of various materials.

Citation Download Citation

Andre A. Gorbunov, Wolfgang Pompe, Andreas Sewing, A. D. Akhsakhaljan, Sergey V. Gaponov, Nikolai N. Salashchenko, Reiner Dietsch, Hermann Mai, and S. Voellmar "Multilayer deposition and nanostructuring by laser methods", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); https://doi.org/10.1117/12.232206

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