High-power characteristics of ultrawideband surface-normal photodetectors

Chi-Kuang Sun; I. Hsing Tan; John Edward Bowers

doi:10.1117/12.258998

22 November 1996 High-power characteristics of ultrawideband surface-normal photodetectors

Chi-Kuang Sun, I. Hsing Tan, John Edward Bowers

Proceedings Volume 2844, Photonics and Radio Frequency; (1996) https://doi.org/10.1117/12.258998
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

We studied ultrafast transport dynamics of ultrawide-band surface-normal p-i-n photodetectors under high illumination and high field using electro-optic sampling techniques. Under reverse bias and high illumination, saturation nonlinearities are dominated by the collapse of the electric field from space charge screening. A transient forward external current is observed with a duration less than 4 ps. The external bias required to compensate these saturation effects increases with increased illumination.

Citation Download Citation

Chi-Kuang Sun, I. Hsing Tan, and John Edward Bowers "High-power characteristics of ultrawideband surface-normal photodetectors", Proc. SPIE 2844, Photonics and Radio Frequency, (22 November 1996); https://doi.org/10.1117/12.258998

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