Improved resolution in field-emission lithography machines

Tom Chisholm; Bernard A. Wallman; Haoning Liu; Eric Munro; John A. Rouse; Xieqing Zhu

doi:10.1117/12.255505

25 October 1996 Improved resolution in field-emission lithography machines

Tom Chisholm, Bernard A. Wallman, Haoning Liu, Eric Munro, John A. Rouse, Xieqing Zhu

Proceedings Volume 2858, Charged-Particle Optics II; (1996) https://doi.org/10.1117/12.255505
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

The electron-optical design of the Leica Vectorbeam Series lithography tool has been modified to reduce the writing spot-size to 2.5 nm; this has required two separate design approaches. Firstly, the current transmitted from the Schottky-emission source module into the column has been reduced from 500 to 25 nA. This makes stochastic beam broadening due to electron-electron interactions negligible. Secondly, a new final lens was designed with sufficiently small aberrations to achieve the desired spot-size. The design includes secondary electron detectors as well as the more usual back-scattered electron detectors. The conversion of the theoretical electron-optical design to reality has been greatly facilitated by the use of CAD solid modelling techniques.

Citation Download Citation

Tom Chisholm, Bernard A. Wallman, Haoning Liu, Eric Munro, John A. Rouse, and Xieqing Zhu "Improved resolution in field-emission lithography machines", Proc. SPIE 2858, Charged-Particle Optics II, (25 October 1996); https://doi.org/10.1117/12.255505

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