Paper
16 August 1996 Infrared reflection polarizers using uniform and diffuse low-index layers buried in high-index substrates
Rasheed M. A. Azzam, Mostofa M. K. Howlader
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Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246204
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan
Abstract
The extinction ratio ER and the reflectance, or throughput, for the unextinguished s polarization Rs are calculated for infrared reflection polarizers that consist of a low- index transparent layer embedded in a high-index transparent substrate. Iso-ER and iso-Rs contours illustrate the dependence of the ER and Rs for a specific IR polarizer on the depth and width of a buried layer of SiO2 in Si at 3.5-micrometers wavelength and 80 degree(s) angle of incidence. Both cases of a uniform layer with sharp boundaries and a diffuse Gaussian layer are considered. The diffuse-layer model employs Bruggeman's effective medium theory and is intended to simulate devices that are fabricated by the oxygen-ion implantation of Si. The angular and wavelength sensitivities of these polarizers are determined.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rasheed M. A. Azzam and Mostofa M. K. Howlader "Infrared reflection polarizers using uniform and diffuse low-index layers buried in high-index substrates", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246204
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