Paper
13 September 1996 Study of cathodoluminescence spectroscopy of aluminum nitride
Fazla Rabbi M.B. Hossain, Xiao Tang, Kobchat Wongchotigul, Michael G. Spencer
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Abstract
The cathodoluminescence (CL) measurements of carbon doped and undoped aluminum nitride (AlN) thin films near the band- edge region were performed at temperatures of 300, 77 and 4.2 K. These films were grown on three different substrates sapphire, 6H-SiC and 4H-SiC. The typical thickness of these films was in the range of 0.35 - 0.4 micrometer. Two distinct peaks 'A' and 'B' were observed in undoped samples around 6.1 and 5.9 eV, respectively. Also, there is an expected peak within the low energy side of peak 'B.' The absorption spectra of different carbon doped AlN on sapphire substrate were carried out to study the Urbach tail's parameters which play an important role near the band-edge transitions.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fazla Rabbi M.B. Hossain, Xiao Tang, Kobchat Wongchotigul, and Michael G. Spencer "Study of cathodoluminescence spectroscopy of aluminum nitride", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250938
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Cited by 3 scholarly publications.
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KEYWORDS
Sapphire

Aluminum nitride

Silicon carbide

Carbon

Absorption

Ultraviolet radiation

Excitons

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