Semiconductor lasers in China

Lianhui Chen

doi:10.1117/12.251888

24 September 1996 Semiconductor lasers in China

Lianhui Chen

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251888
Event: Photonics China '96, 1996, Beijing, China

Abstract

This paper reviews the development of semiconductor lasers, especially the breakthrough on quantum well lasers in China. Regarding on the super thin material growth, the developing history of Molecular beam epitaxy and metalorganic chemical vapor deposition are briefly introduced. Taking some kinds of lasers as examples, the characteristics of long wavelength MQW F-P LD and MQW DFB LD, 808nm high power lasers and visible lasers are also demonstrated. The low dimension lasers including quantum wire and quantum dot are under way.

Citation Download Citation

Lianhui Chen "Semiconductor lasers in China", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251888

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