Paper
3 October 1996 Research on excimer laser-induced chemical vapor deposition of diamond films
Deming Ren, Xiaoyong Hu, Fengmei M. Liu, Jingshan Zhao
Author Affiliations +
Abstract
In our work, the result about the research on excimer-laser- induced chemical vapor deposition (CVD) of diamond films is reported. The XeCl excimer laser was employed as active energy source for photodissociation of carbon source gas. The wavelength of the laser beam is 308 nm with pulse-width of 25 ns, output energy of 180 mJ and power density on the local region up to 300 MW/cm2. The gas mixture was consisted of aromatics (C6 H6 or C7 H8) and H2. The substrate was p-type silicane. The ratio between aromatics and buffer gas (H2) is from 1:1 to 1:4. The temperature of the substrate was controlled at 300 degrees Celsius. A swan band of C2 radical (516 nm) can be observed from the emission spectrum of gas mixture. After two hours deposition, the films were analyzed by Raman spectroscopy. It is shown that there is a wide peak at 1552 cm-1, which is characteristic spectrum of diamond- like films. The diamond-like films were obtained.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deming Ren, Xiaoyong Hu, Fengmei M. Liu, and Jingshan Zhao "Research on excimer laser-induced chemical vapor deposition of diamond films", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252977
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KEYWORDS
Diamond

Excimer lasers

Chemical vapor deposition

Hydrogen

Gases

Carbon

Raman spectroscopy

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