Highly efficient 808-nm-range Al-free lasers by gas source MBE

Alexander Ovtchinnikov; Jari T. Nappi; Jaan Aarik; Stefan Mohrdiek; Harry M. Asonen

doi:10.1117/12.273828

1 May 1997 Highly efficient 808-nm-range Al-free lasers by gas source MBE

Alexander Ovtchinnikov, Jari T. Nappi, Jaan Aarik, Stefan Mohrdiek, Harry M. Asonen

Proceedings Volume 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II; (1997) https://doi.org/10.1117/12.273828
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Aluminum-free material has proved to be very promising for lasers of 800 - 1000 nm wavelength range. Up to now the most widely used growth method of GaInAsP quaternary alloys was Metal-Organic Chemical Vapor Deposition (MOCVD) technique. Gas Source Molecular Beam Epitaxy (GSMBE) is also able to produce high-quality Al-free material for optoelectronics. This paper aims to present the direct comparison of laser material quality grown by MOCVD and GSMBE. The easiness of composition control, flexibility of the deposition process and composition uniformity in GSMBE-grown material allowed us to further improve the performance of laser diodes operating at 800 nm wavelength range.

Citation Download Citation

Alexander Ovtchinnikov, Jari T. Nappi, Jaan Aarik, Stefan Mohrdiek, and Harry M. Asonen "Highly efficient 808-nm-range Al-free lasers by gas source MBE", Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); https://doi.org/10.1117/12.273828

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