Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 um on GaAs substrates

Kwok Kwong Loi; Lei Shen; Harry H. Wieder; William S. C. Chang

doi:10.1117/12.264250

22 January 1997 Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 μm on GaAs substrates

Kwok Kwong Loi, Lei Shen, Harry H. Wieder, William S. C. Chang

Author Affiliations +

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264250
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A novel InGaAs/InAlAs multiple-quantum-well electroabsorption waveguide modulator operating at 1.3 micrometer wavelength has been designed and fabricated for the first time on a GaAs substrate The high-frequency performance of the modulator in an amplifierless rf fiber- optic link is described.

Citation Download Citation

Kwok Kwong Loi, Lei Shen, Harry H. Wieder, and William S. C. Chang "Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 μm on GaAs substrates", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264250

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