CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursor

Raghu Nath Bhattacharya; Joann Granata; W. Batchelor; F. Hasoon; H. Wiesner; K. R. Ramanathan; J. Keane; R. N. Noufi; James R. Sites

doi:10.1117/12.279196

14 October 1997 CuIn_1-xGa_xSe₂-based photovoltaic cells from electrodeposited precursors

Raghu Nath Bhattacharya, Joann Granata, W. Batchelor, F. Hasoon, H. Wiesner, K. R. Ramanathan, J. Keane, R. N. Noufi, James R. Sites

Author Affiliations +

Proceedings Volume 3138, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XV; (1997) https://doi.org/10.1117/12.279196
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

We have fabricated 13.7%-efficient CuIn_1-xGa_xSe₂ (CIGS)-based devices from electrodeposited precursors. As- deposited electrodeposited precursors are Cu-rich films. Additional In, Ga, and Se were added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn_1-xGa_xSe₂. Three devices with Ga/(In + Ga) ratio of 0.16, 0.26, and 0.39 were fabricated from electrodeposited precursors. The films/devices have been characterized by inductive-coupled plasma spectrometry, Auger electron spectroscopy, x-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance- voltage, and spectral response. The electrodeposited device parameters are compared with those of a 17.7% physical vapor deposited device.

Citation Download Citation

Raghu Nath Bhattacharya, Joann Granata, W. Batchelor, F. Hasoon, H. Wiesner, K. R. Ramanathan, J. Keane, R. N. Noufi, and James R. Sites "CuIn_1-xGa_xSe₂-based photovoltaic cells from electrodeposited precursors", Proc. SPIE 3138, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XV, (14 October 1997); https://doi.org/10.1117/12.279196

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