Silicon Technology Applicable To Monolithic Millimeter Wave Sources

A. Rosen; M. Caulton; P. Stabile; A. Gombar; W. Janton; C. P. Wu; C. W. Magee

doi:10.1117/12.933108

2 August 1982 Silicon Technology Applicable To Monolithic Millimeter Wave Sources

A. Rosen, M. Caulton, P. Stabile, A. Gombar, W. Janton, C. P. Wu, C. W. Magee

Proceedings Volume 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits; (1982) https://doi.org/10.1117/12.933108
Event: Integrated Optics and Millimeter and Microwave Integrated Circuits, 1981, Huntsville, United States

Abstract

We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, unique secondary ion mass spectroscopy (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra-thin, reproducible wafers, and have resulted in the development of silicon hybrid circuits, thus paving the way to production of silicon monolithic integrated millimeter-wave sources.

Citation Download Citation

A. Rosen, M. Caulton, P. Stabile, A. Gombar, W. Janton, C. P. Wu, and C. W. Magee "Silicon Technology Applicable To Monolithic Millimeter Wave Sources", Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); https://doi.org/10.1117/12.933108

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