Paper
20 February 1998 Photoluminescence characterization of ZnTeSe epilayer at room temperature
Jiying Zhang, Baojun Yang, Guangyou Yu, Xiwu Fan
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300717
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
ZnTexSe1-x epilayers with composition x equals 0.005, 0.02 and 0.16 have been grown by low pressure-metal organic chemical vapor deposition (LP-MOCVD) method. Two bands (blue S1 and green S2) were observed in the ZnTexSe1-x epilayer with composition x equals 0.005 at room temperature (RT). With increasing composition x greater than 0.02, the S1 band disappeared and the S2 band was the main emission in photoluminescence (PL) spectra. The origin of the S1 and S2 bands was attributed to excitons trapped at Te1 and Ten (n greater than or equal to 2) cluster.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiying Zhang, Baojun Yang, Guangyou Yu, and Xiwu Fan "Photoluminescence characterization of ZnTeSe epilayer at room temperature", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300717
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KEYWORDS
Luminescence

Selenium

Tellurium

Chemical vapor deposition

Excitons

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