Modification of defect structure and properties of CdxHg1-xTe semiconductors by laser pulses

Volodymyr A. Gnatyuk; Peter E. Mozol'; Olena S. Gorodnychenko; Volodymyr Vasyliovych Borshch

doi:10.1117/12.280451

26 August 1997 Modification of defect structure and properties of Cd_xHg_1-xTe semiconductors by laser pulses

Volodymyr A. Gnatyuk, Peter E. Mozol', Olena S. Gorodnychenko, Volodymyr Vasyliovych Borshch

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280451
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Purposeful changes of the properties of Cd_xHg_1-xTe (CMT) semiconductors by irradiation with nanosecond ruby laser pulses were studied in order to obtain structures with desired physical parameters. An investigation was made of photoelectric, electrophysical properties and structure of different CMT solid solutions. Irradiation of CMT with laser pulses of subthreshold energy density modified the point-defect structure in the surface layer leading to an improvement homogeneity of samples. An increase in the energy density shifted the maximum and the long-wavelength edge of the photoconductivity spectrum toward shorter wavelengths. It was established that laser pulses can be used in producing both a p-n-junction in n- type crystals and the surface p⁺-region in p-type solid solutions. Pulse laser irradiation increased the photosensitivity of the epitaxial CMT layers with a cellular structure.

Citation Download Citation

Volodymyr A. Gnatyuk, Peter E. Mozol', Olena S. Gorodnychenko, and Volodymyr Vasyliovych Borshch "Modification of defect structure and properties of Cd_xHg_1-xTe semiconductors by laser pulses", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280451

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