Advanced lithographic methods for 300-nm contact patterning over severe topography with i-line stepper

Ida Chui Shan Ho; Alex Cheng; Siuhua Zhu

doi:10.1117/12.280539

14 August 1997 Advanced lithographic methods for 300-nm contact patterning over severe topography with i-line stepper

Ida Chui Shan Ho, Alex Cheng, Siuhua Zhu

Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280539
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

This paper describes methods in defining sub-350nm contact holes with i-line stepper.Topography is a challenge to contact hole patterning in particular. Optical enhancement technique of halftone phase shift mask and off axis illumination are used. Experimental investigation of focus drilling method and application of organic bottom anti- reflective coating over topographical substrate are shown. The capability of i-line lithography at the 300nm regime of contact patterning over topographical substrate are described; and an acceptable process latitude is demonstrated.

Citation Download Citation

Ida Chui Shan Ho, Alex Cheng, and Siuhua Zhu "Advanced lithographic methods for 300-nm contact patterning over severe topography with i-line stepper", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280539

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