Thermal stability of PECVD W-B-N thin film as a diffusion barrier

YongTae Kim; Dong Joon Kim; Chang Woo Lee; Jong-Wan Park

doi:10.1117/12.284664

5 September 1997 Thermal stability of PECVD W-B-N thin film as a diffusion barrier

YongTae Kim, Dong Joon Kim, Chang Woo Lee, Jong-Wan Park

Proceedings Volume 3214, Multilevel Interconnect Technology; (1997) https://doi.org/10.1117/12.284664
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Effects of boron and nitrogen on electrical and metallurgical properties of plasma enhanced chemical vapor deposition W-B-N thin film have been investigated. These impurities keep the W-B-N thin film in a nanostructured amorphous phase and provide a stuffing effect that is very effective for preventing the fast diffusion of Cu atoms during a high temperature annealing process. The resistivity of the amorphous W-N and W-B-N thin films is attainable between 140 and 153 (mu) (Omega) -cm by controlling a B₁₀H₁₄/NH₃ flow ratio. XRD, Nomarski microscope, RBS, and TEM analysis show that the W-N and W-B-N barriers do not react with Si during an annealing in Ar ambient at 800 - 900 degree(s)C for 30 min and prevent interdiffusion of the Cu atom at 800 approximately 850 degree(s)C for 30 min, which is the best result regarding to the thermal stability of the diffusion barrier. An electromigration test for a SiO₂/W-N/Al interconnect reveals that a medium time to failure is 2 times that of SiO₂/TiN/Al schemes.

Citation Download Citation

YongTae Kim, Dong Joon Kim, Chang Woo Lee, and Jong-Wan Park "Thermal stability of PECVD W-B-N thin film as a diffusion barrier", Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); https://doi.org/10.1117/12.284664

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