Yellow photoluminescence in MOCVD-grown n-type GaN

E. Fred Schubert; W. Grieshaber; Karim S. Boutros; Joan Marie Redwing

doi:10.1117/12.304430

7 April 1998 Yellow photoluminescence in MOCVD-grown n-type GaN

E. Fred Schubert, W. Grieshaber, Karim S. Boutros, Joan Marie Redwing

Proceedings Volume 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II; (1998) https://doi.org/10.1117/12.304430
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The near-band gap and the 'yellow' optical transitions in n- type GaN grown by MOCVD have been studied by photoluminescence experiments. The excitation density ranged from 5 X 10^-6 W/cm^-2 to 50 W/cm^-2. The UV PL intensity increases linearly in the entire range of excitation density. The yellow PL intensity exhibits a linear dependence oat low excitation densities and a square-root dependence at high excitation densities. A theoretical model is developed describing the intensity of the two radiative transition between continuum states and one defect level deep in the band gap as a function of the excitation density, free carrier and defect concentrations. The calculated dependences of the two luminescence channels follow power laws with exponents of 1/2 and 1 depending on excitation density. These dependences are in very good agreement with experimental results. The measured intensity of the yellow luminescence does not saturate at high excitation densities. This rules out the possibility that the yellow PL could arise from a sequential transition via two deep levels in the gap. It is shown that the intensity modulation that frequently appears in the PL spectra is caused by a micro-cavity which is formed by the semiconductor-substrate and semiconductor-air interfaces. Finally, the dependence of the yellow luminescence intensity on n-type doping concentration indicates that the deep center causing the yellow luminescence is an acceptor-like level.

Citation Download Citation

E. Fred Schubert, W. Grieshaber, Karim S. Boutros, and Joan Marie Redwing "Yellow photoluminescence in MOCVD-grown n-type GaN", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304430

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available