High-speed semiconductor lasers

Niloy K. Dutta

doi:10.1117/12.307614

4 May 1998 High-speed semiconductor lasers

Niloy K. Dutta

Proceedings Volume 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.307614
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The fabrication and performance characteristics of high speed semiconductor lasers are described in this paper. These include InGaAsP/InP lasers emitting near 1.55 micrometer, InGaAs/GaAs lasers emitting near 1 micrometer and integrated electroabsorption modulated lasers emitting near 1.55 micrometer.

Citation Download Citation

Niloy K. Dutta "High-speed semiconductor lasers", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); https://doi.org/10.1117/12.307614

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