ACLV control in x-ray lithography

Azalia A. Krasnoperova; Robert P. Rippstein; Denise M. Puisto; Janet M. Rocque

doi:10.1117/12.309568

5 June 1998 ACLV control in x-ray lithography

Azalia A. Krasnoperova, Robert P. Rippstein, Denise M. Puisto, Janet M. Rocque

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309568
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

In this paper, dimensional control of critical features in proximity x-ray lithography is discussed. CD error components attributed to x-ray mask, proximity exposure and resist process are identified. Analysis of linewidth control data at 180 nm and 150 nm ground rules for synchrotron based x-ray proximity lithography is presented. Data have been collected at IBM Advanced Lithography Facility equipped with x-ray stepper built by SVGL and Helios synchrotron radiation x-ray source.

Citation Download Citation

Azalia A. Krasnoperova, Robert P. Rippstein, Denise M. Puisto, and Janet M. Rocque "ACLV control in x-ray lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309568

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