Paper
5 June 1998 Photomask in-plane distortion induced during e-beam patterning
Bassam Shamoun, Michael A. Sprague, Roxann L. Engelstad, Franco Cerrina
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Abstract
As feature sizes decrease and the demand for throughput increases, the semiconductor industry must concentrate on pattern positioning accuracy and process efficiency. Thermomechanical distortions induced in the photomask during fabrication may act to constrain the desired range of operating conditions to meet the manufacturing requirements for pattern placement accuracy and throughput. 3D finite element heat transfer and structural models have been developed to determine the global in-plane distortions induced in the photomask during e-beam patterning. Results obtained from these models show that the thermal-induced distortions, caused by global heating, are significant. Whereas, distortions due to the mechanical loading, caused by resist in situ stress relief, are minimal and can be neglected.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bassam Shamoun, Michael A. Sprague, Roxann L. Engelstad, and Franco Cerrina "Photomask in-plane distortion induced during e-beam patterning", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309581
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Distortion

Photomasks

Electron beam lithography

3D modeling

Tin

Acquisition tracking and pointing

Reticles

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