Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Daniela White; Bernard T. Beauchemin Jr.; Andrew J. Blakeney; Thomas Steinhaeusler

doi:10.1117/12.312383

29 June 1998 Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Daniela White, Bernard T. Beauchemin Jr., Andrew J. Blakeney, Thomas Steinhaeusler

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312383
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Thermal decomposition of silyl substituted methacrylate terpolymers containing acid sensitive groups was studied using thermogravimetric analysis. The onset of decomposition was found to be a function of the microenvironment, i.e. the molar% composition of the acid sensitive group monomer. The Flynn and Wall method of estimating E_a was used to estimate the E_a for decomposition of the terpolymer and where possible, for the acid sensitive group.

Citation Download Citation

Daniela White, Bernard T. Beauchemin Jr., Andrew J. Blakeney, and Thomas Steinhaeusler "Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312383

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