Luminescence of ZnSe(Te) crystals melt-grown from the charge and enriched in selenium

Vladimir D. Ryzhikov; Leonid P. Gal'chinetsky; S. N. Galkin; Konstantin A. Katrunov; Elena K. Lisetskaya

doi:10.1117/12.306233

20 April 1998 Luminescence of ZnSe(Te) crystals melt-grown from the charge and enriched in selenium

Vladimir D. Ryzhikov, Leonid P. Gal'chinetsky, S. N. Galkin, Konstantin A. Katrunov, Elena K. Lisetskaya

Author Affiliations +

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306233
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The evolution of the radioluminescence (RL) spectra and spectral-kinetic characteristics of ZnSe_100-xTe_x (0.01 <EQ x <EQ 0.96) crystals were studied at 77 K as a function of concentration of metallic Se added to the initial charge. The crystals were grown from the melt under argon pressure. The elemental composition of the samples was checked by x-ray luminescence and chemical analysis. It is shown that, depending upon the degree of doping with Te, different RL bands compete with each other. Thus, at 0.01 <EQ x <EQ 0.20 the short-wave luminescence should be probably treated as a self-activated luminescence band caused by recombination in the complex {V _Zn^- + D⁺}, where V is the Zn vacancy, a D-donor. The green-blue luminescence at 0.20 <EQ x <EQ 0.96 can be probably associated with Te clusters, while the formation of the `green' RL band is presumably due to Zn vacancies. The presence of the intense `red' band in ZnSe_100-xTe_x samples, corresponding to the whole range of x, is considered as an indication of the fact that the luminescence center {V _Zn^- + Te⁰ + Zn⁺} comprises the isovalent dopant Te and the excess Zn.

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Vladimir D. Ryzhikov, Leonid P. Gal'chinetsky, S. N. Galkin, Konstantin A. Katrunov, and Elena K. Lisetskaya "Luminescence of ZnSe(Te) crystals melt-grown from the charge and enriched in selenium", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306233

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