Recent advances in GaAs JFETs for deep cryogenic focal plane readouts

Thomas J. Cunningham; Michael Fitzsimmons

doi:10.1117/12.321754

14 September 1998 Recent advances in GaAs JFETs for deep cryogenic focal plane readouts

Thomas J. Cunningham, Michael Fitzsimmons

Proceedings Volume 3360, Infrared Readout Electronics IV; (1998) https://doi.org/10.1117/12.321754
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

The progress of the JPL in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in RI readout electronics operating below 10 Kelvin is discussed. Results on GaAs JFETs fabricated using a highly isotropic HF-based etchant have been presented previously by our group. The isotropic etch reduced the typical input leakage current at 4K to less than 1 fA. These JFETs had a low frequency noise of just under 1 (mu) V/Hz^1/2 at 1 Hz at 4K, while dissipating less than 1 (mu) W of power. Building on this work, we have fabricated small-scale integrated circuits based on this GaAs JFET technology. In this paper we report on the fabrication of small-scale integrated circuit multiplexers and amplifiers. An 8 by 1 source-follower-per-detector multiplexer and a three-transistor differential pair have been fabricated and are fully functional at 4K. The input-referred noise and leakage current is consistent with that for the discrete devices. A systematic study of the device size dependence of the noise has been started, but as yet is inconclusive.

Citation Download Citation

Thomas J. Cunningham and Michael Fitzsimmons "Recent advances in GaAs JFETs for deep cryogenic focal plane readouts", Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); https://doi.org/10.1117/12.321754

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