Paper
2 July 1998 Effects of UV laser radiation on the surface defects of NiO catalysts
Eugenia Ivana, Veronica Lacatusu, Mariana Chelu, Mariana Craiu, Constantin G. Fenic, Aurel Stratan, Leona C. Nistor, Cornel Ghica, P. Marginean
Author Affiliations +
Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312760
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
NiO is a metal-deficient p-type semiconductor with surface defects which are correlated with the non-stoichiometry. The dissociative H2 adsorption on the NiO surface takes place on oxygen-excess sites (over equilibrium). The H2 TPD spectra vary significantly with calcination temperature (stoichiometry) and chemical treatment UV laser radiation enhances H2 adsorption on the defective surfaces (non-stoichiometric) as compared with the stoichiometric ones, even chemically treated. The fourth harmonic of a Q-switched Nd:YAG laser is used for the NiO samples irradiation. The wavelength of the UV laser radiation is 266 nm, under the band-gap of the semiconductor.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugenia Ivana, Veronica Lacatusu, Mariana Chelu, Mariana Craiu, Constantin G. Fenic, Aurel Stratan, Leona C. Nistor, Cornel Ghica, and P. Marginean "Effects of UV laser radiation on the surface defects of NiO catalysts", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312760
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Telescopic pixel displays

Ultraviolet radiation

Adsorption

Oxides

Crystals

Radiation effects

Semiconductors

Back to Top