High-transmittance rim-type attenuated phase-shift masks for sub-0.2-um hole patterns

Haruo Iwasaki; Keiichi Hoshi; Hiroyoshi Tanabe

doi:10.1117/12.328842

1 September 1998 High-transmittance rim-type attenuated phase-shift masks for sub-0.2-μm hole patterns

Haruo Iwasaki, Keiichi Hoshi, Hiroyoshi Tanabe

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328842
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

The lithographic performance of high- and standard- transmittance attenuated phase shift masks (PSMs) was investigated in order to determine the suitability of applying attenuated PSMs to the fabrication of 0.15-micrometers hole patterns. Both PSMs had rim structures to eliminate side lobes, and they have two layers on the quartz substrate: a chromium-fluoride attenuated phase shifter layer and an opaque chromium layer. Both PSMs had similar lithographic performances that were high enough for 0.15 micrometers hole patterns.

Citation Download Citation

Haruo Iwasaki, Keiichi Hoshi, and Hiroyoshi Tanabe "High-transmittance rim-type attenuated phase-shift masks for sub-0.2-μm hole patterns", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328842

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